奥地利Roithner Lasertechnik GmbH InGaAs光电二极管/探测器 InGaAs PIN光电二极管、焦平面InGaAs阵列光电二极管

InGaAs光电二极管

InGaAs Photodiodes

InGaAs PIN光电二极管

InGaAs PDs采用TO和SMD封装

光谱范围从600纳米到2200纳米,有效面积直径可达3毫米

低暗电流、高动态阻抗

货号光谱范围有效面积封装注意
IPD1450-038-5T1.0 – 1.6 µm0.35 x 0.35 mm²TO-181.45 µm peak
IPD1450-038-SMT1.0 – 1.6 µm0.38 x 0.38 mm²SMD1.45 µm peak
PT41130.9 – 1.7 µmØ 75 µmTO-46NEW
PT4113B0.9 – 1.7 µmØ 75 µmTO-46Ball lensNEW
PT51130.9 – 1.7 µmØ 300 µmTO-46
PT5113B0.9 – 1.7 µmØ 300 µmTO-46Ball lensNEW
LAPD-05-09-17-TO460.9 – 1.7 µmØ 0.5 mmTO-46
LAPD-05-06-17-TO460.6 – 1.7 µmØ 0.5 mmTO-46VIS extended range from 600-1700 nmNEW
LAPD-1-09-17-TO460.9 – 1.7 µmØ 1 mmTO-46
LAPD-1-06-17-TO460.6 – 1.7 µmØ 1 mmTO-46VIS extended range from 600-1700 nm
LAPD-1-12-22-TO461.2 – 2.2 µmØ 1 mmTO-46NIR extended range from 1200-2200 nm
LAPD-1-09-17-LCC0.9 – 1.7 µmØ 1 mm6CLCC
LAPD-1-06-17-LCC0.6 – 1.7 µmØ 1 mm6CLCCVIS extended range from 600-1700 nm
PT7111.0 – 1.65 µmØ 2 mmTO-39EOL, stock available
IPD1450-200-SMB1.55 µm peak2 x 2 mm²SMD5.0 x 5.25 x 1.0 mm
LAPD-2-09-17-TO390.9 – 1.7 µmØ 1.9 mmTO-39
LAPD-2-06-17-TO390.6 – 1.7 µmØ 1.9 mmTO-39VIS extended range from 600-1700 nm
LAPD-2-12-22-TO391.2 – 2.2 µmØ 1.9 mmTO-39NIR extended range from 1200-2200 nm
LAPD-2-09-17-LCC0.9 – 1.7 µmØ 1.9 mm8CLCC
LAPD-2-06-17-LCC0.6 – 1.7 µmØ 1.9 mm8CLCCVIS extended range from 600-1700nm
LAPD-3-09-17-TO390.9 – 1.7 µmØ 3 mmTO-39
EPD-1300-3-0.2800 – 1750 nm0.032 mm²3 mm epoxyEOL, stock available

焦平面InGaAs阵列光电二极管

二维InGaAs阵列320×256像素,近红外高灵敏度,
极低噪声、高动态范围、室温工作
波长范围:900 – 1700纳米,像素宽度:30米,响应度0.8安培/瓦,量子效率> 70%

货号光谱范围可操作性数组大小封装注意
FPA320x256-9800.9 -1.7 µm98 %320 x 256 pixel44-pin Ceramic LCC10 MHz, ARC wind.
FPA320x256-9900.9 -1.7 µm99 %320 x 256 pixel44-pin Ceramic LCC10 MHz, ARC wind.
FPA320x256-9990.9 -1.7 µm99.9 %320 x 256 pixel44-pin Ceramic LCC10 MHz, ARC wind.
FPA320x256-1000.9 -1.7 µm>99.95 %320 x 256 pixel44-pin Ceramic LCC10 MHz, ARC wind.

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