Princeton Scientific 半导体单晶 GaAs GaP GaSb Ge InAs InP InSb Si CdS CdSe CdTe ZnS ZnSe ZnTe
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| Crystal | Doping | Type | Carrier Concentr [cm-3] | EPD [cm-2] | Growth Technique & Diameter | PSC Standard Wafer | Information |
|---|---|---|---|---|---|---|---|
| GaAs | None Si Cr Te Zn | SI N SI N P | / 1017…1019 1017…1019 1017…1019 | <1×105 | CZ, LEC & HB ø3″ | 2″ dia x 0.5mm 3″ dia x 0.5mm 4″ dia x 0.6mm 10 x 10 x 05mm | |
| GaP | S Te Zn Undoped | N N P N | 1017…3×1018 1017…3×1018 1017…5×1018 2-6×1016 | <105 | CZ & LEC ø50mm | 2″ dia x 0.5mm 10 x 10 x 0.5mm3 | |
| GaSb | None Zn Te Hi-R Hi-R | P P+ N P N | 2×1016 1-5×1018 2-6×1017 1-5×1016 1-5×1016 | <103 | CZ & LEC ø3″ | 2″ dia x 0.5mm 3″ dia x 0.45mm | |
| Ge | None Sb | P N | <5×103 | CZ/Br ø1″ – ø4″ | 1″ dia x 0.3mm 2″ dia x 0.4mm 4″ dia x 0.5mm | ||
| InAs | None | N | 1-2×1016 | <5×104 | LEC ø30mm | 2″ dia x 0.5mm 10x 10 x 0.5mm3 5x5x0.5mm3 | |
| InP | None Sn S Fe Zn | N N N SI P | 1-2×1016 1-3×1018 1-4×1018/ 0.6-4×1018 | <5×104 | LEC ø2″ | 2″ dia x 0.5mm 10 x 10 x 0.5mm3 | |
| InSb | None Te Ge | N N P | 1~5 x 10E14 1~2 x 10E15 1~2 x 10E15 | <2×102 | 2″ dia x 0.5mm 10 x 10 x 0.5mm3 | ||
| Si | None B As P Sb | P N N N | CZ/FZ ø2″ – ø6″ | 1″ dia x 0.3mm 2″ dia x 0.4mm 4″ dia x 0.5mm 6″ dia x 0.6mm | |||
| CdS | None | Markov ø2″ | 5 x 5 x 1mm3 10 x 10 x 0.5mm3 10 x 10 x 1mm3 | More Info | |||
| CdSe | None | Markov ø2″ | 10 x 10 x 1mm3 | More Info | |||
| CdTe | None | Br | 5 x 5 x 1mm3 10 x 10 x 0.5mm3 10 x 10 x 1mm3 15 x 15 x 0.5mm3 | More Info | |||
| ZnS | None | Markov ø30mm | 5x 5x 0.5mm3 5 x 5 x 1mm3 10 x 10 x 0.5mm3 10 x 10 x 1mm3 | More Info | |||
| ZnSe | None | Markov ø30mm | 5x5x0.5mm3 10 x 10 x 0.5mm3 10x10x1mm3 10 x 5 x 1mm3 2″ dia x 1mm 4″ dia x 1mm | More Info | |||
| ZnTe | None | Markov ø30mm | 10x 10 x 0.5mm3 10 x 10 x 1mm3 | More Info |