磁控源,用于在溅射过程中施加具有高均匀性的薄层。适用于直径为3英寸的目标。
根据溅射工艺所需的条件,我们提供两种类型的源:B型和C型。
所有类型都与我们的M600DC-PS电源以及市场上所有其他直流、射频和脉冲直流电源完全兼容。
特性
有或没有原位倾斜模块
安装法兰范围
烟囱为标准配置
气动圆顶式或侧摆式百叶窗
间接冷却
选项
质量流量控制器(MKS MF1)
定制长度
Z机械手
B型磁控源用于在溅射过程中施加具有高均匀性的薄层。该电源与特高压条件兼容。磁控源专为溅射磁性和铁磁性材料而设计。它可以对厚度达7毫米的目标进行操作。
Mounting flange | DN 160 CF* |
Max. power (DC mode) | 600 W DC ** |
Max. power (RF mode) | 600 W RF ** |
Max. voltage DC | 1200 V |
Connector DC/RF | type 7/16 |
Target | |
form | ring |
diameter | 3″ (76.2 mm) ± 0.2 mm |
thickness | 1 – 7 mm (magnetic & non-magnetic) |
cooling | indirect |
Water flow | min. 1 l/min |
Max. inlet water temperature | < 28 °C |
Max. water pressure | 3 bar |
Tubing diameter | Ø6×1 mm PTFE |
Magnet material | Samarium Cobalt (SmCo) |
Magnet max. temperature | 350°C |
Internal pneumatic shutter | yes |
Shutter type | dome type or flat swing |
Insitu tilt module | yes, range +45° ÷ -10° |
Chimney | yes |
Dedicated materials: | |
typical rates [nm/min] for 200 W: | |
Cu | 18,72 nm/min (distance: 170 mm; target thickness: 3 mm)*** |
Ti | 4,10 nm/min (distance: 170 mm; target thickness: 3 mm)*** |
Fe | 5,16 nm/min ( distance: 170 mm; target thickness: 3 mm)*** |
Internal gas inlet | yes (VCR standard) |
Working gas | Ar |
Max. working pressure | 5×10-3 – 1×10-1 mbar |
Optimal working pressure | 5×10-3 – 5×10-2 mbar |
C型磁控溅射源既兼容射频,也兼容直流,可以沉积多种材料:导体、半导体和绝缘体。磁控管源能够产生均匀、均质和小晶粒的薄膜;具有高密度(低空隙面积)、高镜面性(反射率)、无辐射损伤和粘合断裂等优点。
Mounting flange | DN 160 CF* |
Max. power (DC mode) | 600 W DC ** |
Max. power (RF mode) | 600 W RF ** |
Max. voltage DC | 1200 V |
Connector DC/RF | type 7/16 |
Target | Keeper standard |
form | circular |
diameter | 3″ (76.2 mm) ± 0.2 mm |
thickness | 1 – 6 mm |
cooling | indirect |
Water flow | min. 1 l/min |
Max. inlet water temperature | < 28 °C |
Max. water pressure | 3 bar |
Tubing diameter | Ø6×1 mm PTFE |
Magnet material | Neodymium Iron Boride (NdFeB) |
Magnet max. temperature | 200 °C |
Internal pneumatic shutter | yes |
Shutter type | dome type or flat swing |
Insitu tilt module | yes, range +45° ÷ -10° |
Chimney | yes |
Dedicated materials: | |
typical rates [nm/min] for 200 W: | |
Cu | 19,76 nm/min (distance: 150 mm; target thickness: 3 mm)*** |
Ti | 4,08 nm/min (distance: 150 mm; target thickness: 6 mm)*** 4,32 nm/min (distance: 150 mm; target thickness: 3 mm)*** |
Internal gas inlet | yes (VCR standard) |
Working gas | Ar |
Max. working pressure | 5×10-3 – 1×10-1 mbar |
Optimal working pressure | 5×10-3 – 5×10-2 mbar |
* Other mounting flanges on request
** The maximum power is determined by the target material
*** Distances depend on the geometry of the chamber and the magnetrons