美国AC Photonics Inc. 二极管 光电二极管 高线性InGaAs PIN光电二极管
高线性InGaAs PIN光电二极管
| Parameter | Unit | Specifications | ||||
|---|---|---|---|---|---|---|
| Symbol | Test Conditions | Min. | Typ. | Max. | ||
| Operating Wavelength | nm | λ | - | 1000 - 1650 | ||
| Dark Current | nA | ID | VR=5V, Ee=0 | - | - | 0.2 |
| Responsivity | A/W | Re | VR=5V, λ=1310nm | 0.85 | 0.90 | - |
| Responsivity | A/W | Re | VR=5V, λ=1550nm | 0.90 | 0.95 | - |
| Capacitance | pF | c | f=1MHz, Case grounded VR=5V, Ee=0 | - | 0.63 | 0.75 |
| Operating Voltage | V | Vopr | - | - | - 5 | -15 |
| Second Order Inter-modulation Distortion | dB | IMD2 | f1=400MHz, P1= - 3dBm f2=450.25MHz, P2= - 3dBm MI=40%, Pavg=0dBm, RIoad=50Ω VR=12V | -70 | - | -80 |
| Back Reflection | dB | RL | - | - | - | - 40 |
| Frequency Responsibility | GHz | BW | VR=5V, 50Ω Load with lead, length=6mm, Case open | 2 | - | - |
| Package Dimension | - | - | See “MECHANICAL DIMENSIONS” | |||
| ABSOLUTE MAXIMUM RATINGS(T=25°C) | ||||||
| Parameter | Min. | Typ. | Max. | |||
| Reverse Voltage | V | - | - | - | - | 25 |
| Input Optical Power | dBm | - | - | - | - | 10 |
| Reverse Current | mA | - | - | - | - | 10 |
| Forward Current | mA | - | - | - | - | 10 |
| Operating Temperature | °C | - | - | - 40 | - | +85 |
| Storage Temperature | °C | - | - | - 40 | - | +85 |
| Lead Solder Temperature | °C | - | - | - | - | +260 |
| Lead Solder Duration | s | - | - | - | - | 10 |
| Fiber Yield Strength | N | - | - | 5 | - | - |
Note 1. ESD protection is imperative. It is recommended to use grounding straps, anti-static mats and other EDS protective equipment when handling or testing a photodiode device. 2. Please shorten the length of device leads as much as possible. All parameters measured under 25°C.
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