Silicon Drift Detector (SDD) for High End Applications: Energy resolution at the theoretical limit 高端应用：理论极限下的能量分辨率

When ultimate spectral resolution is required, you should choose the highest performance available on the market. Based on our well-proven SDD droplet technology, our SD3^plus detectors use the latest chip-integrated FET design to push the performance towards the physical limits. 基于我们久经考验的SDD液滴技术，我们的SD3plus探测器使用最新的芯片集成FET设计，将性能推向物理极限。

The SD3^plus Detector Performance

The ultra-low signal capacitances of the chip-integrated JFET offer outstanding low noise performance
Unmatched energy resolution values down to 121 eV @ Mn-K_α and 36 eV @ C-K
The outstanding energy resolution of our detector is especially apparent in light element detection where detector noise plays the largest role
Light element detection with superior performance can be achieved if SDDs are used as windowless detectors in high vacuum applications
Even Lithium K-line and Aluminum L-line can be well measured
The outstanding energy resolutions of the SD3^plus detectors offer accurate quantitative analysis even for very low energy M- and L-lines and weak signals in low kV electron microscopy
The superior performance at warmer temperatures enables new possibilities for applications with low cooling power consumption; light element detection is possible even at room temperature

SD3plus探测器性能芯片集成JFET的超低信号电容提供了卓越的低噪声性能能量分辨率值低至121 eV@Mn-Kα和36 eV@C-K 我们的探测器卓越的能量分辨率在探测器噪声起最大作用的轻元件探测中尤为明显如果在高真空应用中使用SDD作为无窗检测器，则可以实现具有优异性能的轻元件检测即使是锂K线和铝L线也可以很好地测量 SD3plus探测器卓越的能量分辨率提供了精确的定量分析，即使是在低千伏电子显微镜中对极低能量的M-和L-线以及弱信号也是如此在更高温度下的卓越性能为低冷却功耗的应用提供了新的可能性；即使在室温下也可以进行光元件检测

询价采购Silicon Drift Detector (SDD) for High End Applications: Energy resolution at the theoretical limit 高端应用：理论极限下的能量分辨率

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